Analysis of GaN cleaning procedures

Applied Surface Science

Volumn 246, Issue 1-3, 2005, Pages 279-289

  Diale, M ^a   Auret, F D ^a   Van Der Berg, N G ^a   Odendaal, R Q ^a   Roos, W D ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF THE FREE STATE   (South Africa)

Author keywords

Cleaning; GaN; Morphology; Wet chemical

Indexed keywords

AMMONIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CARBON; CLEANING; HEATING; LOW ENERGY ELECTRON DIFFRACTION; METALLIZING; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEIONIZED WATER (DI); THERMAL DESORPTION; WET CHEMICALS; WET CLEANING;

GALLIUM NITRIDE;

EID: 17744388782     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.11.024     Document Type: Article

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