Characterization of thick HVPE GaN films

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 417-424

  Nouet, Gérard ^a,d   Ruterana, Pierre ^a   Chen, Jun ^b   Lei, Benliang ^c   Ye, Haohua ^c   Yu, Guanghui ^c   Qi, Ming ^c   Li, Aizhen ^c  

^a CNRS   (France)

^b Lab Univ de Rech Sci d'Alencon   (France)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^d LABORATOIRE CRISMAT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; MORPHOLOGY; SAPPHIRE; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SURFACES; THERMAL EXPANSION; THICK FILMS;

CRYSTALLINE QUALITY; EDGE DISLOCATIONS; THERMAL EXPANSION COEFFICIENTS; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 9944228140     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.005     Document Type: Article

References (7)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku, Appl. Phys. Lett. 69 (1996) 1477.
2. I. Grzegory, J. Phys.: Condens. Matter 13 (2001) 6875.
3. Shulin Gu, Rong Shan, Yi Shi, Youdou Zheng, Ling Zhang, F. Dwikusuma, T.F. Kuech, J. Cryst. Growth 231 (2001) 342.
4. W.C. Dash, in: Fisher et al. (Eds.), Dislocations and Mechanical Properties of Crystals, Wiley, New York, 1957, p. 57.
5. F.C. Frank, Acta Crystallogr. 4 (1951) 497.
6. S. Amelinckx, J. Chem. Phys. 49 (1952) 411.
7. T. Paskova, E. Valcheva, J. Birch, S. Tungamista, P.-O.A. Persson, P.P. Paskov, S. Evtimova, M. Abrashev, B. Monemar, J. Cryst. Growth 230 (2001) 381.