Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al 2O3 prepared by atomic layer deposition

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Gregusova D ^a,b   Stoklas, R ^a   Mizue, Ch ^b   Hori, Y ^b   Novak J ^a   Hashizume, T ^b   Kordos P ^a,c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b HOKKAIDO UNIVERSITY   (Japan)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; EXPONENTIAL DEPENDENCE; FREQUENCY-DEPENDENT CONDUCTANCE; GAN CAP; GAN CAP LAYERS; GATE OXIDE; GATE VOLTAGES; INTERFACE PROPERTY; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR STRUCTURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOS TRANSISTORS; TIME CONSTANTS; TRAP STATE; TRAP STATE DENSITY; TRAPPING EFFECTS;

ALUMINUM; DIELECTRIC DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SEMICONDUCTOR DEVICES; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

MOS DEVICES;

EID: 77953004956     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428492     Document Type: Article

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