SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 126, Issue 1-2, 1998, Pages 69-82

The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation

(3) Bermudez, V M a Koleske, D D a Wickenden, A E a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; ELECTRONIC STRUCTURE; GAS ADSORPTION; HYDROGEN; ION BOMBARDMENT; LOW ENERGY ELECTRON DIFFRACTION; NITROGEN; SURFACE CLEANING; SURFACE STRUCTURE; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032047821 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00582-5 Document Type: Article

Times cited : (171)

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