Defect acceptor and donor in ion-bombarded GaN

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 5, 2005, Pages 1340-1345

  Petravic, Mladen ^a   Coleman, Victoria A ^a   Kim, Ki Jeong ^b   Kim, Bongsoo ^b   Li, Gang ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c ShenZhen Fangda GuoKe Optronics Technical Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; DEFECTS; ION BOMBARDMENT; NITROGEN; PHOTOEMISSION; SYNCHROTRONS; X RAY ANALYSIS;

BAND GAP; CONDUCTION BAND; INTERSTITIAL LEVELS; PHOTOEMISSION MEASUREMENTS;

GALLIUM NITRIDE;

EID: 31344461892     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1991869     Document Type: Article

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