Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

Physical Review Letters

Volumn 85, Issue 11, 2000, Pages 2352-2355

  Zheng, L X ^a,b   Xie, M H ^a   Seutter, S M ^a   Cheung, S H ^a   Tong, S Y ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DENSITY (SPECIFIC GRAVITY); DEPOSITION; DIFFUSION; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SURFACES;

GALLIUM NITRIDE; GHOST ISLANDS; HOMOEPITAXIAL NUCLEATION; SURFACTANT EFFECT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034274802     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.2352     Document Type: Article

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