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Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5426-5428

Temperature-dependent interface-state response in an Al2O 3/n-GaN structure

(4) Ooyama, Kimihito a,b Kato, Hiroki a Miczek, Marcin a Hashizume, Tamotsu a

a HOKKAIDO UNIVERSITY (Japan)

b Electronics Division (Japan)

Author keywords

C t; C V; Capture cross section; Gan; High temperature; Interface state; MIS

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CAPACITANCE; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SWITCHING CIRCUITS;

C-T; C-V; CAPTURE CROSS SECTION; GAN; HIGH TEMPERATURE; INTERFACE STATE; MIS;

GALLIUM ALLOYS;

EID: 55149112397 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.5426 Document Type: Article

Times cited : (25)

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