Fabrication of enhancement-mode AlGaN/GaN MISHEMTs by using fluorinated Al2O3 as gate dielectrics

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1373-1375

  Chen, Chao ^a   Liu, Xingzhao ^a   Tian, Benlang ^a   Shu, Ping ^a   Chen, Yuanfu ^a   Zhang, Wanli ^a   Jiang, Hongchuan ^a   Li, Yanrong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Enhancement mode (E mode); fluoride based plasma; gate dielectric; metal insulator semiconductor high electron mobility transistors (MISHEMTs)

Indexed keywords

ALGAN/GAN; ANALOG INTEGRATED CIRCUIT; DEPTH PROFILE; ENHANCEMENT-MODE; METAL INSULATORS; METAL-INSULATOR-SEMICONDUCTORS; MONOLITHIC INTEGRATION;

ALUMINUM; ANALOG CIRCUITS; ATOMIC SPECTROSCOPY; DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRON MOBILITY; FLUORINE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LINEAR INTEGRATED CIRCUITS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTOR INSULATOR BOUNDARIES; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

EID: 80053566884     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162933     Document Type: Article

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