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Volumn 9, Issue 3-4, 2012, Pages 445-448
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Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template
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Author keywords
ELOG; GaN; HVPE; VSLED
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Indexed keywords
CRYSTAL QUALITIES;
ELOG;
EPITAXIAL LATERAL OVERGROWTH;
GAN;
GAN TEMPLATE;
HVPE;
HYDRIDE VAPOUR PHASE EPITAXIES;
INGAN/GAN;
INGAN/GAN MQWS;
LED CHIPS;
LUMINOUS PROPERTIES;
OXYGEN PLASMA TREATMENTS;
SURFACE OPTIMIZATION;
VSLED;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PLASMA APPLICATIONS;
SEMICONDUCTOR QUANTUM WELLS;
VAPORS;
EPITAXIAL GROWTH;
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EID: 84863369437
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.201100409 Document Type: Article |
Times cited : (2)
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References (11)
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