Surface treatments toward obtaining clean GaN(0 0 0 1) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4745-4756

  Hattori, Azusa N ^a   Endo, Katsuyoshi ^a   Hattori, Ken ^b   Daimon, Hiroshi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

GaN; Low energy electron diffraction; Reflection high energy electron diffraction; Scanning tunneling microscopy; Surface preparation; Surface structure

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARBIDES; CHEMICAL CLEANING; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRONS; FILM PREPARATION; GALLIUM NITRIDE; HYDRIDES; HYDROGEN; III-V SEMICONDUCTORS; INDUSTRIAL CHEMICALS; LOW ENERGY ELECTRON DIFFRACTION; METAL ANALYSIS; METAL CLEANING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE ROUGHNESS; SURFACE STRUCTURE; TEMPERATURE PROGRAMMED DESORPTION; ULTRAHIGH VACUUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); FREE STANDING SUBSTRATES; HYDRIDE VAPOR PHASE EPITAXY; SURFACE CONTAMINATIONS; SURFACE PREPARATION; SURFACE STOICHIOMETRY; THREE-DIMENSIONAL (3D) ISLANDS; THREE-STEP ANNEALING;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77950594646     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.001     Document Type: Article

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