Surface potential at as-grown GaN(0001) MBE layers

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 773-777

  Kocan M ^a   Rizzi, A ^a,b   Luth H ^a   Keller, S ^c   Mishra, U K ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036920883     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3.0.CO;2-0     Document Type: Conference Paper

References (6)

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4. A. Rizzi et al., in: Proc. SPIE, Eds. Y. Arakawa, P. Blood, and M. Osinski, Phys. Simul. Optoelectronic Devices IX, 4283 (2001) (pp. 85-95).
5. J.W.P. Hsu et al., Appl. Phys. Lett. 78, 3980 (2001).
6. B. Heying et al., J. Appl. Phys. 88, 1855 (2000).