MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 390-393

  Chang, Y C ^a   Lee, Y J ^a   Chiu, Y N ^a   Lin, T D ^a   Wu, S Y ^a   Chiu, H C ^a   Kwo, J ^a   Wang, Y H ^b   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Gadolinium compounds; B1. Nitrides; B2. Dielectric materials; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL GROWTH; GADOLINIUM COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS;

DENSITY OF STATES; DEPLETION BEHAVIORS; FREQUENCY DISPERSION;

DIELECTRIC MATERIALS;

EID: 33947318784     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.259     Document Type: Article

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