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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 20, 2001, Pages 2053021-2053025

Vacancy effects on plasma-induced damage to n-type GaN

(4) Chua, S J a Choi, H W a Zhang, J a Li, P a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; NITROGEN DERIVATIVE;

ARTICLE; CHEMICAL ANALYSIS; CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; SURFACE PROPERTY;

EID: 0035890547 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (29)

References (12)

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12
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- Japan, (Institute of Pure and Applied Physics, Tokyo)
- (2000) Proceedings of the International Workshop on Nitride Semiconductors , pp. 786-789
- Choi, H.W.¹ Chua, S.J.² Xu, X.H.³ Sun, Y.J.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.