Assessment of GaN surface pretreatment for atomic layer deposited high-K dielectrics

Applied Physics Express

Volumn 4, Issue 5, 2011, Pages

  Nepal, Neeraj ^a   Garces, Nelson Y ^a,b   Meyer, David J ^a   Hite, Jennifer K ^a   Mastro, Michael A ^a   Eddy Jr , Charles R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Global Strategies Group   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; ELECTRICAL PROPERTY; HIGH-K DIELECTRIC; METALORGANIC CHEMICAL VAPOR DEPOSITION; PRE-TREATMENT; SURFACE PRE-TREATMENTS; SURFACE PRETREATMENT; UNIFORMLY SMOOTH;

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SURFACES;

GALLIUM NITRIDE;

EID: 79956110720     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.055802     Document Type: Article

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