Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

Semiconductor Science and Technology

Volumn 22, Issue 5, 2007, Pages 522-527

  Liu, Chang ^a   Chor, Eng Fong ^a   Tan, Leng Seow ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC POTENTIAL; GALLIUM NITRIDE; GATE DIELECTRICS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

GATE OXIDE; SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247474333     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/5/011     Document Type: Article

References (26)

1. Zhang N Q, Keller S, Parish G, Heikman S, Denbaars S P and Mishra U K 2000 IEEE Electron Device Lett. 21 421
2. Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K and Parikh P 2004 IEEE Electron Device Lett. 25 117
3. Kohn E, Daumiller I, Schmid P, Nguyen N X and Nguyen C N 1999 Electron. Lett. 35 1022
4. Mizuno S, Ohno Y, Kishimoto S, Maezawa K and Mizutani T 2002 Japan. J. Appl. Phys. 41 5125
5. Vetury R, Zhang N Q, Keller S and Mishra U K 2001 IEEE Trans. Electron Devices 48 560
6. Arulkumaran S, Egawa T, Ishikawa H, Jimbo T and Sano Y 2004 Appl. Phys. Lett. 84 613
7. Khan M A, Hu X, Simin G, Lunev A, Yang J, Gaska R and Shur M S 2000 IEEE Electron Device Lett. 21 63
8. Mehandru R et al 2003 Appl. Phys. Lett. 82 2530
9. Nakano Y, Kachi T and Jimbo T 2003 Appl. Phys. Lett. 83 4336
10. Ye P D, Yang B, Ng K K, Bude J, Wilk G D, Halder S and Hwang J C M 2005 Appl. Phys. Lett. 86 063501
11. Lee B H, Kang L, Nieh R, Qi W J and Lee J C 2000 Appl. Phys. Lett. 76 1926
12. Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
13. Dzhurinskii B F, Gati D, Sergushin N P, Nefedov V I and Salyn Y V 1975 Russ. J. Inorg. Chem. 20 2307
14. Sarma D D and Rao C N R 1980 J. Electron Spectrosc. Relat. Phenom. 20 25
15. Jones M N, Kwon Y W and Norton D P 2005 Appl. Phys. A 81 285
16. Simin G, Khan M A, Shur M S and Gaska R 2004 Int. J. High Speed Electron. Syst. 14 197
17. Liu C, Chor E F and Tan L S 2006 Appl. Phys. Lett. 88 173504
18. Liu C, Chor E F, Tan L S and Dong Y F 2006 Appl. Phys. Lett. 88 222113
19. Heidelberger G, Bernt J, Fox A, Marso M, Lüth H, Greguov D and Kordo P 2006 Phys. Status Solidi a 203 1876
20. Marso M, Heidelberger G, Indlekofer K M, Bernt J, Fox A, Kordo P and Lüth H 2006 IEEE Trans. Electron Devices 53 1517
21. Antoszewski J, Dell J M, Faraone L, Fisher T A, Parish G, Wu Y F and Mishra U K 2000 J. Appl. Phys. 87 3900
22. Rai S, Adivarahan V, Tipirneni N, Koudymov A, Yang J, Simin G and Khan M A 2006 Japan. J. Appl. Phys. 45 4985
23. Lu W, Kumar V, Schwindt R, Piner E and Adesida I 2002 Solid-State Electron 46 1441
24. Wang C K, Chuang R W, Chang S J, Su Y K, Wei S C, Lin T K, Ko T K, Chiou Y Z and Tang J J 2005 Mater. Sci. Eng. B 119 25
25. Binari S C, Ikossi K, Roussos J A, Kruppa W, Doewon P, Dietrich H B, Koleske D D, Wickenden A E and Henry R L 2001 IEEE Trans. Electron Devices 48 465
26. Shen C, Li M F, Wang X P, Yeo Y C and Kwong D L 2006 IEEE Electron Device Lett. 27 55