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Volumn 310, Issue 23, 2008, Pages 4876-4879

The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates

Author keywords

A1. Substrates; A3. Low pressure metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; EPILAYERS; EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; VAPORS; X RAY DIFFRACTION ANALYSIS;

EID: 56249137831     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.008     Document Type: Article
Times cited : (7)

References (11)
  • 7
    • 56249115984 scopus 로고    scopus 로고
    • W. Strupinski, K. Kosciewicz, J. Weyher, A. Olszyna, International Conference on Silicon Carbide and Related Materials 2007 (ICSCRM2007).
    • W. Strupinski, K. Kosciewicz, J. Weyher, A. Olszyna, International Conference on Silicon Carbide and Related Materials 2007 (ICSCRM2007).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.