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Volumn 310, Issue 23, 2008, Pages 4876-4879
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The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates
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Author keywords
A1. Substrates; A3. Low pressure metalorganic vapor phase epitaxy; B1. Nitrides
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Indexed keywords
CRYSTAL GROWTH;
EPILAYERS;
EPITAXIAL GROWTH;
ETCHING;
GALLIUM NITRIDE;
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
SUBSTRATES;
SURFACE MORPHOLOGY;
SURFACE ROUGHNESS;
VAPORS;
X RAY DIFFRACTION ANALYSIS;
A1. SUBSTRATES;
A3. LOW PRESSURE METALORGANIC VAPOR PHASE EPITAXY;
ATOMIC FORCES;
B1. NITRIDES;
CRYSTAL QUALITIES;
DIFFRACTOMETRY;
GAN EPITAXIES;
GAN LAYERS;
HIGH RESOLUTIONS;
METAL ORGANIC;
SIC SUBSTRATES;
SUBSTRATE ETCHINGS;
SUBSTRATE SURFACE PREPARATIONS;
SURFACE PREPARATIONS;
GALLIUM ALLOYS;
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EID: 56249137831
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.08.008 Document Type: Article |
Times cited : (7)
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References (11)
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