In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 1, 2012, Pages 22-24

  Sivasubramani, Prasanna ^a   Park, Tae Joo ^a,c   Coss, Brian E ^a   Lucero, Antonio ^a   Huang, Jie ^a   Brennan, Barry ^a   Cao, Yu ^b   Jena, Debdeep ^b   Xing, Huili Grace ^b   Wallace, Robert M ^a   Kim, Jiyoung ^a  

^a The University of Texas at Dallas   (United States)

^b University of Notre Dame   (United States)

^c Hanyang University   (South Korea)

Author keywords

Atomic layer deposition; GaN; Half cycle treatments; In situ XPS; Self cleaning effects; Trimethyl aluminum

Indexed keywords

GAN; HALF-CYCLE TREATMENTS; IN-SITU; SELF-CLEANING EFFECTS; TRIMETHYL ALUMINUMS;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CLEANING; GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTONS; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

SUBSTRATES;

EID: 83455236114     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105417     Document Type: Article

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