Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 B, 2004, Pages

  Hashizume, Tamotsu ^a   Anantathanasarn, Sanguan ^a   Negoro, Noboru ^a   Sano, Eiichi ^a   Hasegawa, Hideki ^a   Kumakura, Kazuhide ^b   Makimoto, Toshiki ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Al2O3; AlGaN; GaN; HFET; Insulated gate; Normally off

Indexed keywords

ALUMINA; ELECTRIC INSULATION; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THIN FILMS;

AL2O3; ALGAN; GAN; INSULATED GATES (IG);

FIELD EFFECT TRANSISTORS;

EID: 4243167992     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l777     Document Type: Article

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