Comparison of metal-oxide-semiconductor capacitors on c- and m-plane gallium nitride

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Matocha, Kevin ^a   Tilak, Vinayak ^a   Dunne, Greg ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; HYSTERESIS; LIGHT POLARIZATION; MOS DEVICES; PYROELECTRICITY; SILICON COMPOUNDS;

CAPACITANCE VOLTAGE HYSTERESIS; CRYSTAL FACES; INTERFACE STATE DENSITY; POLAR C PLANE (0001);

GALLIUM NITRIDE;

EID: 33947601387     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2716309     Document Type: Article

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