Band offset measurements of the GaN (0001)/HfO 2 interface

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7155-7158

  Cook Jr , T E ^a   Fulton, C C ^a   Mecouch, W J ^a   Davis, R F ^a   Lucovsky, G ^a   Nemanich, R J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSET MEASUREMENTS; ELECTRON AFFINITY; VALANCE BANDS;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DENSIFICATION; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ENERGY GAP; FERMI LEVEL; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; OXIDATION; PERMITTIVITY; PHOTOEMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 0346962347     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1625579     Document Type: Article

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