Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

Applied Surface Science

Volumn 202, Issue 3-4, 2002, Pages 131-138

  Zhou, J ^a   Reddic, J E ^a   Sinha, M ^a   Ricker, W S ^a   Karlinsey, J ^a   Yang, J W ^b   Khan, M A ^b   Chen, D A ^a  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

Etching; Gallium nitride; Scanning tunneling microscopy; Surface morphology; X ray photoelectron spectroscopy

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

THREADING DISLOCATIONS;

SURFACE PHENOMENA;

EID: 0037203079     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00889-9     Document Type: Article

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