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Volumn , Issue , 2009, Pages 419-422
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Characteristics analysis of gate dielectrics in AlGaN/GaN MIS-HEMT
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Author keywords
Al2O3; AlGaN GaN; High k; MIS HEMT
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Indexed keywords
ALGAN/GAN;
CHARACTERISTICS ANALYSIS;
CURRENT COLLAPSE;
DEVICE CHARACTERISTICS;
EFFECTS OF TEMPERATURE;
GATE-LEAKAGE CURRENT;
METAL-INSULATOR-SEMICONDUCTORS;
MIS-HEMT;
SATURATION DRAIN CURRENT;
ALUMINUM;
DIELECTRIC MATERIALS;
DRAIN CURRENT;
ELECTRIC CURRENT MEASUREMENT;
ELECTRON MOBILITY;
GALLIUM NITRIDE;
GATES (TRANSISTOR);
HAFNIUM COMPOUNDS;
HIGH ELECTRON MOBILITY TRANSISTORS;
LEAKAGE CURRENTS;
METAL INSULATOR BOUNDARIES;
MIS DEVICES;
SOLID STATE DEVICES;
SWITCHING CIRCUITS;
GATE DIELECTRICS;
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EID: 77949587714
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/EDSSC.2009.5394226 Document Type: Conference Paper |
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Times cited : (6)
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References (10)
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