Device-quality GaN-dielectric interfaces by 300 °C remote plasma processing

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 119-123

  Bae, C ^a   Rayner, G B ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Ga 2 O 3; GaN dielectric interfaces; MOSd devices; SiO 2; Subcutaneous oxidation; Surface leaning

Indexed keywords

DIELECTRIC MATERIALS; GALLIUM NITRIDE; OXIDATION; PLASMAS; REACTION KINETICS;

DIELECTRIC INTERFACES;

INTERFACES (MATERIALS);

EID: 0038007909     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00497-5     Document Type: Conference Paper

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