Adsorption and desorption kinetics of Ga on GaN(0001): Application of Wolkenstein theory

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 7, 2010, Pages

  Bruno, Giovanni ^a   Losurdo, Maria ^a   Kim, Tong Ho ^b   Brown, April ^b  

^a CNR   (Italy)

^b Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957593169     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.075326     Document Type: Article

References (24)

1. G. Koblmüller, J. Brown, R. Averbeck, H. Riechert, P. Pongratz, and J. S. Speck, Jpn. J. Appl. Phys. 44, L906 (2005). 10.1143/JJAP.44.L906
2. J. E. Northrup, J. Neugebauer, R. M. Feenstra, and A. R. Smith, Phys. Rev. B 61, 9932 (2000). 10.1103/PhysRevB.61.9932
3. O. Brandt, Y. J. Sun, L. Daweritz, and K. H. Ploog, Phys. Rev. B 69, 165326 (2004). 10.1103/PhysRevB.69.165326
4. A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci. Technol. B 16, 2242 (1998). 10.1116/1.590156
5. T. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett. 73, 487 (1998). 10.1063/1.121909
6. J. Neugebauer, T. Zywietz, M. Scheffler, J. E. Northrup, and C. G. Van de Walle, Phys. Rev. Lett. 80, 3097 (1998). 10.1103/PhysRevLett.80.3097
7. C. Adelmann, J. Brault, G. Mula, B. Daudin, L. Lymperakis, and J. Neugebauer, Phys. Rev. B 67, 165419 (2003). 10.1103/PhysRevB.67.165419
8. J. S. Brown, G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, J. Appl. Phys. 99, 074902 (2006). 10.1063/1.2181415
9. L. He, Y. T. Moon, J. Xie, M. Munoz, D. Johnstone, and H. Morkoc, Appl. Phys. Lett. 88, 071901 (2006). 10.1063/1.2166478
10. G. Koblmüller, R. Averbeck, H. Riechert, and P. Pongratz, Phys. Rev. B 69, 035325 (2004). 10.1103/PhysRevB.69.035325
11. A. S. Özcan, Y. Wang, G. Ozaydin, and K. F. Ludwig, J. Appl. Phys. 100, 084307 (2006). 10.1063/1.2358307
12. C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, G. Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002). 10.1063/1.1471923
13. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000). 10.1063/1.1305830
14. S. Choi, T.-Ho Kim, H. O. Everitt, A. Brown, M. Losurdo, G. Bruno, and A. Moto, J. Vac. Sci. Technol. B 25, 969 (2007). 10.1116/1.2720856
15. S. Choi, T. H. Kim, H. O. Everitt, A. Brown, M. Losurdo, G. Bruno, and A. Moto, Appl. Phys. Lett. 89, 181915 (2006). 10.1063/1.2372744
16. W. Göpel and G. Rocker, J. Vac. Sci. Technol. 21, 389 (1982). 10.1116/1.571788
17. T. Wolkenstein, Electronic Processes on Semiconductor Surfaces during Chemisorption (Consultants Bureau, New York, 1991), Chap., pp. 83-124.
18. S. Andrieu and F. A. d'Avitaya, J. Cryst. Growth 112, 146 (1991). 10.1016/0022-0248(91)90919-V
19. S. Sabuktagin, M. A. Reshchikov, D. K. Johnstone, and H. Morkoc, GaN, AlN, InN, and Their Alloys, MRS Symposia Proceedings No. 831 (Materials Research Society, Pittsburgh, 2004), p. Y5.39.
20. L. X. Zheng, M. H. Xie, S. M. Seutter, S. H. Cheung, and S. Y. Tong, Phys. Rev. Lett. 85, 2352 (2000). 10.1103/PhysRevLett.85.2352
21. T. H. Wolkenstein, The Electron Theory of Catalysis on Semiconductors (Pergamon Press, Oxford, 1963)
22. O. Peshev, J. Res. Inst. Catalysis, Hokkaido Univ. 16, 217 (1968).
23. -.
24. T. Engler and W. Lorenz, Surf. Sci. 104, 549 (1981). 10.1016/0039- 6028(81)90077-7