GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Prez Tomas A ^a   Placidi, M ^a   Perpi X ^a   Constant, A ^a   Godignon, P ^a   Jord X ^a   Brosselard, P ^a   Millan J ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; CLOSED-FORM EXPRESSION; ENHANCEMENT-MODE; EXPERIMENTAL DATA; FIELD-EFFECT MOBILITIES; FREE CARRIERS; GAN SUBSTRATE; GATE BIAS; HIGH DENSITY; HIGHER TEMPERATURES; INTERFACE ROUGHNESS; INTERFACE STATE; INTERFACE TRAPS; INVERSION CHANNELS; INVERSION CHARGE; INVERSION LAYER; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; P-TYPE; PHYSICS-BASED MODELS; SURFACE ROUGHNESS EFFECTS; TEMPERATURE DEPENDENCE; TRAPPED CHARGE; VOLTAGE GATES;

DIELECTRIC DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SURFACE ROUGHNESS;

FIELD EFFECT TRANSISTORS;

EID: 67649544625     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3140614     Document Type: Article

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