Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry

Journal of Applied Physics

Volumn 84, Issue 5, 1998, Pages 2722-2726

  Bhat, Navakanta ^a,b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000082343     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368384     Document Type: Article

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