In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 95-102

  Liu, Xinke ^a   Chin, Hock Chun ^a   Tan, Leng Seow ^a   Yeo, Yee Chia ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b AGENCY FOR SCIENCE   (Singapore)

Author keywords

Gallium nitride (GaN); in situ surface passivation; interface state density

Indexed keywords

CAPACITANCE VOLTAGE; HIGH TEMPERATURE; HIGH-PERMITTIVITY GATE DIELECTRICS; IN-SITU; INTERFACE QUALITY; INTERFACE STATE; INTERFACE STATE DENSITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTI-CHAMBER; NOVEL TECHNIQUES; SURFACE PASSIVATION; TREATMENT TEMPERATURE; VACUUM ANNEAL;

GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PUMPS;

PASSIVATION;

EID: 78650875601     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2084410     Document Type: Article

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