Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1207-1210

  Chang, Y C ^a   Huang, M L ^a   Chang, Y H ^a   Lee, Y J ^a   Chiu, H C ^a   Kwo, J ^a,b   Hong, M ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Al2O 3; Atomic layer deposition (ALD); GaN; HfO2; High k dielectric; MOS

Indexed keywords

ATOMIC-LAYER-DEPOSITION (ALD); GAN; HFO2; HIGH-K DIELECTRIC; MOS;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; LEAKAGE CURRENTS; NANOCOMPOSITE FILMS; PHOTOELECTRON SPECTROSCOPY; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDES;

EID: 79958026432     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.098     Document Type: Conference Paper

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