Electrical characteristics of GaN and Si based Metal-Oxide-Semiconductor (MOS) capacitors

ECS Transactions

Volumn 41, Issue 3, 2011, Pages 429-437

  Hossain, Tashfin ^a   Wei, Daming ^a   Edgar, J H ^a  

^a Kansas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GALLIUM NITRIDE; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; METALS; MOS CAPACITORS; NANOCRYSTALLINE MATERIALS; OXIDE MINERALS; OXIDE SEMICONDUCTORS; PHOTONICS; SEMICONDUCTING SILICON; TITANIUM DIOXIDE; WIDE BAND GAP SEMICONDUCTORS;

CAPACITANCE VOLTAGE; CRYSTALLINE PHASE; CURRENT VOLTAGE MEASUREMENT; ELECTRICAL CHARACTERISTIC; ELECTRICAL QUALITY; FLAT-BAND VOLTAGE; HYSTERESIS ANALYSIS; METAL-OXIDE- SEMICONDUCTORCAPACITORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 84857293391     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633058     Document Type: Conference Paper

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