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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1941-1943

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs

(2) Tian, Feng a Chor, Eng Fong a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

AlGaN GaN; Field effect transistors; MIS heterostructures

Indexed keywords

ALGAN/GAN; BI-LAYER; DC PERFORMANCE; DEVICE PERFORMANCE; ESTIMATED LIFETIME; GATE LEAKAGES; GATE VOLTAGE SWING; HETEROSTRUCTURES; INTERFACIAL LAYER; MAXIMUM DRAIN CURRENT; METAL-INSULATOR-SEMICONDUCTORS; ORDER OF MAGNITUDE; ROOM TEMPERATURE; SINGLE LAYER; SURFACE PASSIVATION; THERMAL STABILITY;

ALUMINUM; CRYSTALS; DRAIN CURRENT; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HETEROJUNCTIONS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION;

FIELD EFFECT TRANSISTORS;

EID: 77955781172 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200983452 Document Type: Conference Paper

Times cited : (6)

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