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Volumn 86, Issue 15, 2005, Pages 1-3

Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); GAP STATES; GATE DIELECTRICS; NANOWIRES;

EID: 20844440321     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1899745     Document Type: Article
Times cited : (327)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.