Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 8, 2006, Pages

  Xie, M H ^a   Gong, M ^a   Pang, E K Y ^a   Wu, H S ^a   Tong, S Y ^b  

^a The University of Hong Kong   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33747647959     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.085314     Document Type: Article

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