Low-temperature preparation of GaN-SiO 2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2402-2410

  Bae, Choelhwyi ^a   Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LAYERS; LOW-TEMPERATURE PREPARATION; REMOTE PLASMA-ASSISTED OXIDATION (RPAO);

AUGER ELECTRON SPECTROSCOPY; CRYSTAL DEFECTS; DIELECTRIC FILMS; ELECTRIC INSULATORS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; MOS CAPACITORS; OPTOELECTRONIC DEVICES; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 10344245526     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1807396     Document Type: Article

References (27)

1. S. J. Pearton, F. Ren, A. P. Zhang, and K. P. Lee, Mater. Sci, Eng., R. 30, 55 (2000).
2. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
3. E. S. Aydil, K. P. Giapis, R. A. Gottscho, V. M. Donnelly, and E. Yoon, J. Vac. Sci. Technol. B 11, 195 (1993).
4. M. Passlack, E. F. Schubert, W. S. Hobson, M. Hong, N. Moriya, S. N. G. Chu, K. Konstadinidis, J. P. Mannaerts, M. L. Schnoes, and G. J. Zydzik, J. Appl. Phys. 77, 686 (1995).
5. J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, A. M. Sergent, and R. L. Masaitis, Appl. Phys. Lett. 75, 1116 (1999).
6. G. G. Fountain, S. V. Hattangady, R. A. Rudder, R. J. Markunas, G. Lucovsky, S. S. Kim, and D. V. Tsu, J. Vac. Sci. Technol. A 7, 576 (1989).
7. G. Lucovsky, S. S. Kim, D. V. Tsu, G. G. Fountain, and R. J. Markunas, J. Vac. Sci. Technol. B 7, 861 (1989).
8. G. Lucovsky, S. S. Kim, and J. T. Fitch, J. Vac. Sci. Technol. B 8, 822 (1989).
9. T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovsky, Appl. Phys. Lett. 60, 434 (1992).
10. G. Lucovsky, IBM J. Res. Dev. 43, 301 (1999).
11. A. Gölz, G. Lucovsky, K. Koh, D. Wolfe, H. Niimi, and H. Kurz, J. Vac. Sci. Technol. B 15, 1097 (1997).
12. R. S. Johnson, H. Niimi, and G. Lucovsky, J. Vac. Sci. Technol. A 18, 1230 (2000).
13. R. Therrien, G. Lucovsky, and R. Davis, Appl. Surf. Sci. 166, 513 (2000).
14. J. A. Cooper, Jr., Phys. Status Solidi A 162, 305 (1997).
15. D. K. Schoder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).
16. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
17. J. I. Izpura, Semicond. Sci. Technol. 16, 243 (2001).
18. C. Bae and G. Lucovsky, Surf. Sci. 532-535, 759 (2003).
19. S. Pal, S. K. Ray, B. R. Chakraborty, S. K. Lahiri, and D. N. Bose, J. Appl. Phys. 90, 4103 (2001).
20. T. S. Lay, W. D. Liu, M. Hong, J. Kwo, and J. P. Mannaerts, Electron. Lett. 37, 595 (2001).
21. H. C. Casey, G. G. Fountain, R. G. Alley, B. P. Keller, and S. P. Den-Baars, Appl. Phys. Lett. 68, 1850 (1996).
22. B. Gaffey, L. J. Guido, X. W. Wang, and T. P. Ma, IEEE Electron Device Lett. 48, 458 (2001).
23. K. Matocha, T. P. Chow, and R. J. Gutmann, IEEE Electron Device Lett. 23, 79 (2002).
24. Y. Nakano and T. Jimbo, Appl. Phys. Lett. 80, 4756 (2002).
25. T. Hashizume, E. Alekseev, D. Pavlidis, K. S. Boutros, and J. Redwing, J. Appl. Phys. 88, 1983 (2000).
26. A. Goetzberger and J. C. Irvin, IEEE Electron Device Lett. 15, 1009 (1968).
27. J. Tan, M. K. Das, J. A. Cooper Jr., and M. R. Melloch, Appl. Phys. Lett. 70, 2280 (1997).