Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Applied Surface Science

Volumn 226, Issue 4, 2004, Pages 331-334

  Liu, X Y ^a   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

AlGaN; GaN; Heterostructure; MBE; Surface roughness

Indexed keywords

ACETONE; ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; ETCHING; MOLECULAR BEAM EPITAXY; REFLECTION; SAPPHIRE; SURFACE ROUGHNESS;

ALGAN; GAN; HETEROSTRUCTURE;

GALLIUM NITRIDE;

EID: 1842580129     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.10.043     Document Type: Article

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