High-power operation of normally-off GaN MOSFETs

Furukawa Review

Volumn , Issue 36, 2009, Pages 1-5

  Niiyama, Yuki ^a   Shinagawa, Tatsuyuki ^b   Ootomo, Shinya ^c   Kambayashi, Hiroshi ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a  

^a GaN Power Electronics Team   (Japan)

^b R and D Div   (Japan)

^c Yokohama R and D Lab   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CRITICAL ELECTRIC FIELD; CURRENT FLOWS; GATE VOLTAGES; HIGH TEMPERATURE; HIGH-POWER OPERATION; HOME APPLIANCES; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOSFETS; OPERATION CURRENTS; OPERATION TEMPERATURE; POWER SUPPLY; POWER TRANSISTORS; SATURATION VELOCITY; SYSTEM SAFETY;

DOMESTIC APPLIANCES; ELECTRIC FIELDS; GALLIUM ALLOYS; MOS DEVICES; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SYSTEMS ENGINEERING; TRANSISTORS;

GALLIUM NITRIDE;

EID: 70349295753     PISSN: None     EISSN: 13481797     Source Type: Journal    
DOI: None     Document Type: Article

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