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Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

Photoassisted high-frequency capacitance-voltage characterization of the Si3 N4 /GaN interface

(2) Swenson, B L a Mishra, U K a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CAPACITANCE VOLTAGE; DEEP DEPLETION; HIGH FREQUENCY HF; HOLE GENERATION; INTERFACE STATE DENSITY; METAL-INSULATOR-SEMICONDUCTOR DIODES; ROOM TEMPERATURE; TERMAN METHODS; WIDE BAND GAP;

ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT SOURCES; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR INSULATOR BOUNDARIES;

SEMICONDUCTOR DIODES;

EID: 70349651755 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224852 Document Type: Article

Times cited : (106)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.