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Volumn 93, Issue 11, 2008, Pages

Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES;

EID: 52349121538     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2981571     Document Type: Article
Times cited : (87)

References (15)
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    • SSCOA4 0038-1098 10.1016/0038-1098(65)90039-6.
    • G. Lucovsky, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(65) 90039-6 3, 299 (1965).
    • (1965) Solid State Commun. , vol.3 , pp. 299
    • Lucovsky, G.1
  • 8
    • 0000845971 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.23.5335.
    • A. Chantre, G. Vincent, and D. Bois, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.23.5335 23, 5335 (1981).
    • (1981) Phys. Rev. B , vol.23 , pp. 5335
    • Chantre, A.1    Vincent, G.2    Bois, D.3
  • 13
    • 0000869373 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.56.R10020.
    • C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56. R10020 56, R10020 (1997).
    • (1997) Phys. Rev. B , vol.56 , pp. 10020
    • Van De Walle, C.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.