GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 282-284

  Wu, Y Q ^a   Ye, P D ^a   Wilk, G D ^b   Yang, B ^c  

^a PURDUE UNIVERSITY   (United States)

^b ASM AMERICA   (United States)

^c IBM   (United States)

Author keywords

Aluminium oxide; Gallium nitride; Metal oxide semiconductor structures

Indexed keywords

ALUMINA; CARRIER MOBILITY; DEPOSITION; GALLIUM NITRIDE; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM COMPOUNDS;

CHANNEL MOBILITY; METAL OXIDE SEMICONDUCTOR STRUCTURES;

MOSFET DEVICES;

EID: 33750681013     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.020     Document Type: Article

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