High-quality MgO/TiO2/nanolaminates on p-GaN MOS capacitor

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 558-560

  Lee, Ko Tao ^a   Huang, Chih Fang ^a   Gong, Jeng ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TUNGHAI UNIVERSITY   (Taiwan)

Author keywords

Dielectric films; III V semiconductor; NH4)2S x; Postmetallization annealing (PMA)

Indexed keywords

C-V CURVE; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTIC; GATE DIELECTRIC STACKS; HIGH QUALITY; II-IV SEMICONDUCTORS; INTERFACE TRAP DENSITY; NANO-LAMINATES; NANOLAMINATE; NH4)2S X; POST-METALLIZATION ANNEALING;

ANNEALING; CAPACITANCE; CAPACITORS; DIELECTRIC FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); MOS CAPACITORS;

PNEUMATIC CONTROL EQUIPMENT;

EID: 77953027485     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045101     Document Type: Article

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