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Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

Environmental stability of candidate dielectrics for GaN-based device applications

(8) Herrero, A M a Gila, B P a Gerger, A a Scheuermann, A a Davies, R a Abernathy, C R a Pearton, S J a Ren, F a

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; DEVICE APPLICATION; ELECTRICAL PROPERTY; ENVIRONMENTAL STABILITY; GAN GROWTH; GAN/SAPPHIRE; METAL-OXIDE-SEMICONDUCTOR DIODE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MGO FILMS; MOCVD; MOCVD REACTOR; SELECTIVE AREA GROWTH; SURFACE-ROUGHENING; TRIMETHYL GALLIUM; X RAY REFLECTIVITY;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHEMICAL STABILITY; CRYSTAL GROWTH; DIELECTRIC MATERIALS; DISSOLUTION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTODEGRADATION; SCANDIUM; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 70350089382 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236568 Document Type: Article

Times cited : (6)

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