SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 157, Issue 11, 2010, Pages

Effect of thermal annealing on the GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer

(6) Lee, Ming Lun a Mue, T S b Sheu, J K b Chang, K H b Tu, S J b Hsueh, T H b

a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AC BIAS; AMBIENT OXYGEN; ANNEALING PROCESS; C-V CURVE; CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE NUMBER; EFFECTIVE CHARGE; FLAT-BAND VOLTAGE; GALLIUM OXIDES; GATE LAYERS; HETEROSTRUCTURES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; METAL-OXIDE-SEMICONDUCTOR DIODE; NEGATIVE VALUES; NEGATIVE VOLTAGE; PHOTOELECTROCHEMICAL OXIDATION; THERMAL-ANNEALING;

ANNEALING; DIELECTRIC DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; OXYGEN;

SEMICONDUCTOR DIODES;

EID: 77957721378 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3489264 Document Type: Article

Times cited : (11)

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