Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1483-1488

  Koyama, Yuji ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE TREATMENT; THERMIONIC EMISSION; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE; SCHOTTKY CONTACT; TRANSMISSION LINE MODEL; VACUUM DEPOSITION;

OHMIC CONTACTS;

EID: 0033175436     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00093-3     Document Type: Article

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