Effect of anneal temperature on GaN nucleation layer transformation

Journal of Crystal Growth

Volumn 258, Issue 1-2, 2003, Pages 89-99

  Lada, M ^a   Cullis, A G ^a   Parbrook, P J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

A1. Desorption; A1. Nucleation; A1. Recrystallization; A3. In situ reflectivity monitoring; A3. Metalorganic vapour phase epitaxy; B1. Gallium nitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; RECRYSTALLIZATION (METALLURGY); TRANSMISSION ELECTRON MICROSCOPY;

REFLECTIVITY SIGNALS;

GALLIUM NITRIDE;

EID: 0042331040     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01517-3     Document Type: Article

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