GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

Surface Science

Volumn 423, Issue 1, 1999, Pages 70-84

  Smith, A R ^a   Feenstra, R M ^a   Greve, D W ^b   Shin, M S ^b   Skowronski, M ^b   Neugebauer, J ^c   Northrup, J E ^d  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^d PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPUTATIONAL METHODS; CRYSTAL ORIENTATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE;

ADATOMS; DENSITY FUNCTIONAL THEORY (DFT); GALLIUM NITRIDE; LOW INDEX SINGLE CRYSTALS; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033096894     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00903-0     Document Type: Article

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