SCOPUS 정보 검색 플랫폼

Volumn , Issue , 2007, Pages 261-264

1.8 kV AlGaN/GaN HEMTs with high-k/Oxide/SiN MIS structure

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC STRUCTURE; GATE DIELECTRICS;

BREAKDOWN VOLTAGE CHARACTERISTICS; GATE STRUCTURE; GATE-DRAIN DISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 39749154716 PISSN: 10636854 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ISPSD.2007.4294982 Document Type: Conference Paper

Times cited : (11)

References (11)

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