SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 13, 2011, Pages

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(6) Esposto, Michele a Krishnamoorthy, Sriram a Nath, Digbijoy N a Bajaj, Sanyam a Hung, Ting Hsiang a Rajan, Siddharth a

a OHIO STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE CHARACTERISTIC; CONDUCTION BAND OFFSET; ENERGY BAND; FLAT BAND; GAN SUBSTRATE; INTERFACE CHARGE; METAL INSULATOR SEMICONDUCTOR CAPACITORS; POSITIVE CHARGE DENSITY;

ALUMINUM; ALUMINUM COATINGS; ALUMINUM GALLIUM NITRIDE; CONDUCTION BANDS; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES;

ELECTRIC PROPERTIES;

EID: 80053523545 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3645616 Document Type: Article

Times cited : (164)

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