Device characteristics of AlGaN/GaN MOS-HEMTs using high-κ praseodymium oxide layer

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3305-3309

  Chiu, Hsien Chin ^a   Yang, Chih Wei ^a   Lin, Yung Hsiang ^a   Lin, Ray Ming ^a   Chang, Liann Be ^a   Horng, Kuo Yang ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

GaN; High ; Metal oxide semiconductor high electron mobility transistors (MOS HEMTs); Power; Praseodymium; Pulse measurement

Indexed keywords

ANNEALING; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; OXYGEN; PRASEODYMIUM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; THICK FILMS; TRANSISTORS;

ALGAN/GAN; DIELECTRIC LAYERS; FLOW ENVIRONMENTS; GAN; GAN HEMTS; GATE LEAKAGE CURRENTS; IN-SITU; LAYER FORMATIONS; MODE OPERATIONS; OUTPUT POWER DENSITIES; OXYGEN FLOW RATES; POSTDEPOSITION ANNEALING; POWER; PRASEODYMIUM OXIDES; PULSE MEASUREMENT; SEMI-CONDUCTORS; THERMAL STABILITIES; VOLUME PRODUCTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 56549089153     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2004851     Document Type: Article

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