The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 560-566

  Vetury, Ramakrishna ^a,b   Zhang, Naiqain Q ^a   Keller, Stacia ^a   Misha, Umesh K ^a  

^a University of California   (United States)

^b GTRAN Inc   (United States)

Author keywords

AlGaN; Current collapse; Dispersion; GaN; HEMT; HFET; Passivation; Surface states; Transistor

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION;

CURRENT COLLAPSE; SURFACE STATES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035278804     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906451     Document Type: Article

References (14)

1. Microwave performance of a 0.2 μm gate AlGaN/GaN heterostructure field effect transistor
2. Measured power performance of AlGaN/GaN MODFET
3. High Al-content AlGaN/GaN HEMT's on SiC substrates with very high power performance
4. Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB
5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
6. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
7. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
8. Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization
9. Direct measurement of gate depletion in high break-down (405 V) AlGaN/GaN heterostructure field effect transistors
10. GaN-based FET's for microwave power amplification
11. Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
12. Drain current compression in GaN MODFET's under large-signal modulation at microwave frequencies
13. Results, potential and challenges of high power GaN-based transistors
14. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's