Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy

Applied Surface Science

Volumn 214, Issue 1-4, 2003, Pages 1-10

  Oliver, R A ^a   Norenberg C ^a   Martin, M G ^a   Crossley, A ^a   Castell, M R ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Gallium nitride; Scanning tunnelling microscopy; Surface cleaning; Surface morphology; X ray photoelectron spectroscopy

Indexed keywords

AMMONIA; ANNEALING; BIPOLAR TRANSISTORS; CRYSTAL DEFECTS; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; SURFACE CLEANING; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL-SEMICONDUCTOR CONTACTS;

GALLIUM NITRIDE;

EID: 0038209388     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00011-4     Document Type: Article

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