New design of nozzle structures and its effect on the surface and crystal qualities of thick GaN using a horizontal HVPE reactor

Applied Surface Science

Volumn 255, Issue 11, 2009, Pages 5926-5931

  Wu, Jiejun ^a   Zhao, Lubing ^a   Wen, Dongyuan ^a   Xu, Ke ^a   Yang, Zhijian ^a   Zhang, Guoyi ^a   Li, Hui ^b   Zuo, Ran ^b  

^a PEKING UNIVERSITY   (China)

^b JIANGSU UNIVERSITY   (China)

Author keywords

Hydride vapor phase epitaxy; Nozzle structures; Reactor; Surface and crystal qualities; Thick GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; GALLIUM NITRIDE; HYDRIDES; III-V SEMICONDUCTORS; OPTICAL PROPERTIES; ROCKET NOZZLES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; THICK FILMS; VAPOR PHASE EPITAXY;

CRYSTAL QUALITIES; HYDRIDE VAPOR PHASE EPITAXY; NOZZLE STRUCTURE; REACTOR; THICK GAN;

NOZZLE DESIGN;

EID: 60949104673     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.035     Document Type: Article

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